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| Silicon MOS FETs (Small Signal) 2SK3064 Silicon N-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 0.425 unit: mm 2.10.1 1.250.1 0.425 0.65 1 q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. q Low-voltage drive (Vth: -1 to 2V) q Low Ron 2.00.2 1.30.1 0.65 3 2 0.2 0.90.1 0 to 0.1 s Absolute Maximum Ratings (Ta = 25C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 30 20 100 200 150 150 -55 to +150 Unit V V mA mA mW C C 1: Gate 2: Source 3: Drain 0.70.1 0.20.1 EIAJ: SC-70 S-Mini Type Package (3-pin) Marking Symbol: 2D s Electrical Characteristics (Ta = 25C) Parameter Drain current Gate cut-off current Gate threshold voltage Forward transfer admittance Drain to source ON-resistance Turn-on time Turn-off time Symbol IDSS IGSS Vth | Yfs | RDS(on) ton toff Conditions VDS = 30V, VGS = 0 VGS = 20V, VDS = 0 VDS = 5V, ID = 1A VDS = 5V, ID = 10mA VDS = 5V, ID = 10mA VDD = 5V, VGS = 0 to 5V, RL = 200 VDD = 5V, VGS = 0 to 5V, RL = 200 1 15 30 150 35 50 min typ max 0.1 1 2 Unit A A V mS ns ns 0.15-0.05 +0.1 0.3-0 s Features +0.1 1 Silicon MOS FETs (Small Signal) PD Ta 200 120 2SK3064 ID VDS 60 | Yfs | VGS Forward transfer admittance |Yfs| (mS) Ta=25C VDS=5V 50 Allowable power dissipation PD (mW) 160 100 Drain current ID (mA) VGS=6.0V 80 5.5V 5.0V 60 4.5V 4.0V 40 3.5V 20 3.0V 2.5V 40 120 30 80 20 40 10 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 2 4 6 8 10 12 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) ID VGS 240 VDS=5V 200 30 100 VIN IO VO=5V Ta=25C Drain current ID (mA) 160 Ta=-25C 120 25C 75C 80 Input voltage VIN (V) 12 10 3 1 0.3 0.1 0.03 40 0 0 2 4 6 8 10 0.01 0.1 0.3 1 3 10 30 100 Gate to source voltage VGS (V) Output current IO (mA) 2 |
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